Mobility calculation of new material channel of MOSFETs based on Group IV Alloy

計畫名稱:Mobility calculation of new material channel of MOSFETs based on Group IV Alloy

所屬單位:電子所

研究團隊:Advanced Silicon Device and Process Lab

計畫主持人:劉致為

研究人員:藍偟翔

資源需求:Matlab and C++

使用期間:2008/09~

研究主題:
Mobility calculation of new material channel of MOSFETs based on Group IV Alloy

研究內容概述:
Strain-Si technology is the most important technology to enhance mobility in the present complementary metal-oxide-semiconductor (CMOS) technology. However, the enhancement of mobility has its own limits, our group chooses Group IV alloy to replace Si channel. This project focuses on mobility simulation to find out the optimum mobility enhancement. Band structure of Group IV alloy will be simulated by Empirical pseudopotential method and the Luttinger-Kohn 6×6 k.p model. The one-dimensional Schrodinger and Poisson equation self-consistently to get the quantized subband and wave function in inversion layer. Phonon scattering and roughness scattering and alloy scattering will be included in mobility calculation further. The Kubo-Greenwood formula is used to calculate the mobility for each subband. The hole and electron mobility will simulate further in low and high electric field.

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